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Epitaxial Nonpolar III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy
(2018-08-09)
The popularity of III-nitride materials has taken up the semiconductor industry to newer applications because of their remarkable properties. In addition to having a direct and wide band gap of 3.4 eV, a very fascinating ...
InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy
The present research work focuses on the growth and characterization of group III-Nitride (InGaN) epitaxial layers as well as nanostructures on Si(111) substrates. The growth system used in this study was a plasma-assisted ...