Browsing by Subject "III-Nitrides"
Now showing items 1-4 of 4
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Device Applications of Epitaxial III-Nitride Semiconductors
(2018-05-14)Through the history of mankind, novel materials have played a key role in techno- logical progress. As we approach the limits of scaling it becomes difficult to squeeze out any more extensions to Moore’s law by ... -
III- Nitride Thin Films and Nanostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy
This thesis focuses on studying heterostructures of GaN, Silicon and AlN. GaN nanostructures are grown on bare Si (111) with and without a GaN buffer layer and GaN film was grown on an AlN layer. Apart from the material ... -
InGaN Based 2D, 1D and 0D Heterostructures on Si(111) by Plasma Assisted Molecular Beam Epitaxy
The present research work focuses on the growth and characterization of group III-Nitride (InGaN) epitaxial layers as well as nanostructures on Si(111) substrates. The growth system used in this study was a plasma-assisted ... -
Layered Metal Dichalcogenides-Based Hybrid Devices for Resistive Sensing
During the past few decades, photodetectors (PDs) are being regarded as the crucial components of many photonic devices which are being used in various important applications. However, the PDs based on the traditional bulk ...