Browsing by Advisor "Mahapatra, Santanu"
Now showing items 1-20 of 20
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Analytical Modeling Of Quantum Thershold Voltage For Short Channel Multi Gate Silicon Nanowire Transistors
(2010-12-29)Silicon nanowire based multiple gate metal oxide field effect transistors(MG-MOSFET) appear as replacements for conventional bulk transistors in post 45nm technology nodes. In such transistors the short channel effect(SCE) ... -
Atom-to-circuit Modeling Strategy for 2d Transistors
Two-dimensional materials are now being considered as viable options for CMOS (complementary metal-oxide-semiconductor) technology extension due to their diverse electronic and opto-electronic properties. However, introduction ... -
Atomistic Study of Carrier Transmission in Hetero-phase MoS2 Structures
(2018-05-25)In recent years, the use of first-principles based atomistic modeling technique has become extremely popular to gain better insights on the various locally modulated electronic properties of nano materials and structures. ... -
Classifying Magnetic and Non-magnetic Two-dimensional Materials by Machine Learning
There has been a giant leap in technological advancement with the introduction of graphene and its remarkable properties after 2005. Since the inception of graphene, the new class of materials called 2D materials are ... -
Compact Modeling Of Asymmetric/Independent Double Gate MOSFET
(2014-07-18)For the past 40 years, relentless focus on Moore’s Law transistor scaling has provided ever-increasing transistor performance and density. In order to continue the technology scaling beyond 22nm node, it is clear that ... -
Compact Modeling of Short Channel Common Double Gate MOSFET Adapted to Gate-Oxide Thickness Asymmetry
(2018-05-08)Compact Models are the physically based accurate mathematical description of the cir-cuit elements, which are computationally efficient enough to be incorporated in circuit simulators so that the outcome becomes useful for ... -
Exploration of Real and Complex Dispesion Realtionship of Nanomaterials for Next Generation Transistor Applications
(2018-03-21)Technology scaling beyond Moore’s law demands cutting-edge solutions of the gate length scaling in sub-10 nm regime for low power high speed operations. Recently SOI technology has received considerable attention, however ... -
First Principles Based Mobility Estimation of Graphene
Electron-phonon coupling (EPC) plays a vital role in detecting transport properties (e.g. mobility) of any material. First principles-based estimation of the mobility for any new material could act as a useful guideline ... -
First principles-based study of monolayer WSSe and metal interface.
The semiconductor-metal interface is universal for any electron device. Two-dimensional semiconductors have the advantages of free dangling bonds and atomically flat surfaces, making them promising materials to substitute ... -
First-principles Based Investigation of the Adsorption and Optoelectronic Properties of Polymorphic Borophene
The discovery of graphene has prompted interest in other two-dimensional materials, especially borophene, which is a single layer of boron atoms that forms a variety of crystal shapes. Borophene, the lightest member of the ... -
First-principles based study of graphene inserted tellurene-metal interface
Atomically thin two-dimensional (2D) materials have attracted extensive research interest since the journey started with the successful isolation of graphene in 2004. 2D materials have shown remarkable advancement in the ... -
GPU-Accelerated Quantum Transport Solver to Explore 2D Material Space for Transistor Operation
For decades, silicon has been the mainstay of the semiconductor industry. However, to preserve the electrostatic integrity of MOSFETs (metal oxide semiconductor field effect transistors), technology downscaling necessitates ... -
High-Throughput Computational Techniques for Discovery of Application-Specific Two-Dimensional Materials
Two-dimensional (2D) materials have revolutionized the field of materials science since the successful exfoliation of graphene in 2004. Consequently, the advances in computational science have resulted in massive generic ... -
Impact Of Body Center Potential On The Electrostatics Of Undoped Body Multi Gate Transistors : A Modeling Perspective
(2010-07-09)Undoped body multi gate (MG) Metal Oxide Semiconductor Field Effect Transistors (MOSFET) are appearing as replacements for single gate bulk MOSFET in forthcoming sub-45nm technology nodes. It is therefore extremely necessary ... -
Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits
(2010-04-06)Although scalingof CMOS technology has been predicted to continue for another decade, novel technological solutions are required to overcome the fundamental limitations of the decananometer MOS transistors. Single Electron ... -
Investigation of Electro-thermal and Thermoelectric Properties of Carbon Nanomaterials
(2018-04-06)Due to the aggressive downscaling of the CMOS technology, power and current densities are increasing inside the chip. The limiting current conduction capacity(106 Acm−2)and thermal conductivity(201Wm−1K−1 for Al and 400 ... -
Multiscale Modeling of Quantum Transport in 2D Material Based MoS Transistors
Atomically thin 2D materials have ushered in a new era in the fi eld of nano-science and tech- nology and have been translated to notable advancements in the design of sensors, optoelectronic devices, exible electronics. ... -
Physics Based Analytical Thermal Conductivity Model For Metallic Single Walled Carbon Nanotube
(2013-07-02)Single-Walled Carbon Nanotube (SWCNT) based Very Large Scale Integrated circuit (VLSI) interconnect is one of the emerging technologies, and has the potential to overcome the thermal issues persisting even with the advanced ... -
Quantum-Drift-Diffusion Formalism Based Compact Model For Low Effective Mass Channel MOSFET
With the passage of time the semiconductor research community around the globe has progressed from a nearly four decades of dominating Silicon research to look for newer transistor materials, in the pursuit of more operating ... -
Sub-Threshold Slope Modeling & Gate Alignment Issues In Tunnel Field Effect Transistor
(2010-07-26)The Tunnel Field Effect Transistor (TFET) with sub-60mV/decade Sub-threshold slope and extremely high ION/IOFF ratio has attracted enough attention for low standby power (LSTP) applications where the battery life is very ...