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dc.contributor.advisorVenkataraman, V
dc.contributor.authorJoshua, Arjun
dc.date.accessioned2010-04-06T07:18:24Z
dc.date.accessioned2018-07-31T06:19:04Z
dc.date.available2010-04-06T07:18:24Z
dc.date.available2018-07-31T06:19:04Z
dc.date.issued2010-04-06T07:18:24Z
dc.date.submitted2009
dc.identifier.urihttps://etd.iisc.ac.in/handle/2005/665
dc.description.abstractWe correlated experimental results with theoretical estimations of the dielectric function ε(ω) in two contexts: the effect of an electric field in quantum wells and that of the spin polarization of an interacting electron-hole plasma in bulk semiconductors. In the first part, we recorded photoreflectance spectra from Ge/GeSi quantum wells of different widths but having comparable builtin electric fields caused by doping. The reason why the spectra differed in overall shape was difficult to understand by conventional methods, for example, by calculating the allowed transition energies or by fitting the data with lineshape functions at each transition energy. Instead, we computed the photoreflectance spectra from first-principles by using the confined electron and hole wavefunctions. This method showed that the spectra differ in overall shape because of the experimentally hitherto unobserved trend in quantum well electro-optical properties, from the quantum confined Franz-Keldysh effect to the bulk Franz-Keldysh effect, as the well width is increased. The second part develops a threeband microscopic theory for the optical properties due to spin-polarized carriers in quasiequilibrium. We show that calculations based on this theory reproduce all the trends observed in a recent circularly polarized pump-probe experiment reported in the literature. To make the computation less intensive, we proposed a simplified, two-band version of this theory which captured the main experimental features. Besides, we constructed a cw diode laser-based pump-probe setup for our own optical studies of spin-polarized carriers by Kerr rotation. We achieved a sensitivity of detection of Kerr rotation of 3 x 10¯ 8 rad, corresponding to an order of magnitude improvement over the best reports in the literature. The efficacy of our setup allowed for the demonstration of a pumpinduced spin polarization in bulk GaAs, under the unfavorable conditions of steady-state and room temperature.en
dc.language.isoen_USen
dc.relation.ispartofseriesG22939en
dc.subjectSpin Polarizationen
dc.subjectSemiconductorsen
dc.subjectDoped Quantum Wellen
dc.subjectSpin-Polarized Semiconductorsen
dc.subjectQuantum Wells - Electro-Optical Propertiesen
dc.subjectSpin-Polarized Semiconductors - Optical Nonlinearitiesen
dc.subjectKerr Rotationen
dc.subjectGaAsen
dc.subjectAllan Varianceen
dc.subject.classificationElectrodynamicsen
dc.titleEffects Of Spin Polarization And Spatial Confinement On Optical Properties Of Bulk Semiconductors And Doped Quantum Wellsen
dc.typeThesisen
dc.degree.namePhDen
dc.degree.levelDoctoralen
dc.degree.disciplineFaculty of Scienceen


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