Now showing items 21-30 of 239
Direct Measurement of Itinerant Magnetism & Interface States in Semiconductors using Time-varying Magnetic Fields
Magnetism in a solid | dia, para, ferro, or of other forms | originates majorly from its electrons; one could, infact, ignore the nuclear contribution. There are two types of electrons in a solid: bound, and free (also ...
Microfabricated Devices For DNA Analysis
Structural, Electronic And Vibrational Properties Of n-layer Graphene With And Without Doping : A Theoretical Study
Graphene – a two-dimensional honeycomb lattice of sp2-bonded carbon atoms – has been attracting a great deal of research interest since its first experimental realization in 2004, due to its various novel properties and ...
Studies Of Diffuse Ultraviolet Radiation
Ever since the first observations of diffuse ultraviolet radiation by Hayakawa et al. (1969) and Lillie & Witt (1976), there has been an effort to understand its distribution and its origin. Unfortunately, because of the ...
On the Nature Of Propagating MHD Waves In The Solar Atmosphere
One of the most persistent problem in solar physics is the identification of the mechanism that heats the solar corona and accelerates the fast solar wind. Magneto-hydrodynamic (MHD)waves play a crucial role in heating of ...
Electrical Transport in the Hybrid Structures of 2D Van Der Waals Materials and Perovskite Oxide
Perovskite oxides have provided a wide variety of exotic functionalities based on their unique physical and chemical properties. By combining different perovskite oxides, interesting physical phenomena have been observed ...
Quantum Simulations by NMR : Applications to Small Spin Chains and Ising Spin Systems
Quantum simulations, where controllable quantum systems are used to simulate other quantum systems, originally proposed by Richard Feynman, are one of the most remarkable applications of quantum information science. Compared ...
Facile and Process Compatible Growth of High-k Gate Dielectric Materials (TiO2, ZrO2 and HfO2) on Si and the Investigation of these Oxides and their Interfaces by Deep Level Transient Spectroscopy
The continuous downscaling has enforced the device size and oxide thickness to few nanometers. After serving for several decades as an excellent gate oxide layer in complementary metal oxide semiconductor (CMOS) devices, ...