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    Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications 

    Jajala, Bujjamma (2013-09-13)
    The scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors to sub-100nm requires replacement of conventional Silicon dioxide layer with high dielectric constant (K) material for gate dielectric. Among ...

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    Author
    Jajala, Bujjamma (1)
    Subject
    Complementary Metal Oxide Semiconductor (CMOS) (1)
    Condensed Matter Physics (1)
    Dielecrtics (1)Hafnium Dioxide Thin Films (1)HfO2 Thin Films (1)high-K Dielectrics (1)Ion Assisted Deposition (IAD) (1)
    Thin Film Deposition (1)
    Thin Films - (1)... View MoreDate Issued2013 (1)Has File(s)
    Yes (1)

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