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Investigations On Gallium Antimonide : An Optoelectronic Material

dc.contributor.advisorBhat, H L
dc.contributor.advisorSangunni, K S
dc.contributor.authorDutta, Partha Sarathi
dc.date.accessioned2013-08-08T06:21:35Z
dc.date.accessioned2018-07-31T06:21:27Z
dc.date.available2013-08-08T06:21:35Z
dc.date.available2018-07-31T06:21:27Z
dc.date.issued2013-08-08
dc.date.submitted1995
dc.identifier.urihttps://etd.iisc.ac.in/handle/2005/2196
dc.identifier.abstracthttp://etd.iisc.ac.in/static/etd/abstracts/2804/G14141-Abs.pdfen_US
dc.language.isoen_USen_US
dc.relation.ispartofseriesG14141en_US
dc.subjectGallium Antimonide Semiconductoren_US
dc.subjectOptoelectronic Materialsen_US
dc.subjectSingle Crystal Growthen_US
dc.subjectGaSben_US
dc.subjectOptoelectronic Technologiesen_US
dc.subjectLiquid Phase Epitaxyen_US
dc.subject.classificationElectronic Engineeringen_US
dc.titleInvestigations On Gallium Antimonide : An Optoelectronic Materialen_US
dc.typeThesisen_US
dc.degree.namePhDen_US
dc.degree.levelDoctoralen_US
dc.degree.disciplineFaculty of Scienceen_US


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