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Development and Characterization of Multi-finger GaN HEMT for Power switching applications
Power electronics is the branch that connects electricity and the world. Power devices play a significant role in reducing CO2 emissions and saving energy. As technology develops, the main focus is reducing energy consumption, ...
Deeply Scaled InAlN/GaN-on-Silicon High Electron Mobility Transistors for RF Applications
Wide bandgap gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising candidates for next-generation radio frequency (RF) power amplifier applications owing to high electron saturation velocity ...
Investigation of Buffer Design and Carbon doping in AlGaN/GaN HEMTs for High Breakdown Voltages
III-nitride HEMTs are strong contenders for next-generation power electronic applications. The superior material and electrical properties render GaN-based transistors suitable for high-power switching. The material ...
Normally off AlxGa(1-x)N/GaN devices: Materials, process and device architecture innovations
AlxGa(1-x)N/GaN HEMTs find applications in power electronics systems as high-frequency power switches. The formation of a highly mobile 2 dimensional electron gas (2DEG) at a heterointerface in an otherwise insulating wide ...