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    Engineering Nano-Electronic Devices using 2-D Materials: CMOS Logic to Biosensing 

    Sanjay, Sooraj
    Technology scaling has driven the development of semiconductor technology that forms a ubiquitous part of daily utilities such as smartphones, computers, and wearables. However, efforts to continue scaling have met ...

    Development and Characterization of Multi-finger GaN HEMT for Power switching applications 

    Baby, Rijo
    Power electronics is the branch that connects electricity and the world. Power devices play a significant role in reducing CO2 emissions and saving energy. As technology develops, the main focus is reducing energy consumption, ...

    Development of High-Performance Piezoelectric Micromachined Transducers for Near Ultrasound 

    Gupta, Harshvardhan
    Near-ultrasound refers to sound with frequencies just above the range of human hearing, from about 18 to 40 kHz. This band is rarely used for typical ultrasound applications and is ignored for all except the most demanding ...

    Investigation of Growth, Structural and Optical properties of different phases of Ga2O3 

    Muazzam, Usman Ul
    Among the semiconducting sesquioxides, Ga2O3 has attracted considerable research attention in recent years due to its excellent properties, including direct ultra wide band gap, optical transparency, high excitonic binding ...

    Deeply Scaled InAlN/GaN-on-Silicon High Electron Mobility Transistors for RF Applications 

    Vanjari, Sai Charan
    Wide bandgap gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising candidates for next-generation radio frequency (RF) power amplifier applications owing to high electron saturation velocity ...

    Gallium Oxide Vertical Power Devices - Modeling, Material Growth, and Hetero-epitaxial Integration with Silicon 

    Mehta, Mahek Vijaykumar
    𝛽-Ga2O3 is a candidate for a new generation of power semiconductors that can significantly lower the conduction losses and increase power density in the power converters. PFOM or power figure of merit (V2Br/Ron) is a ratio ...

    Architectures for enhancing bandwidth and power scalability of optical frequency combs 

    Vikram, Bhagavatula Shiva
    Optical frequency combs (OFCs) have revolutionized high bandwidth communications, spectroscopy, arbitrary RF waveform generation, LIDAR (Light Detection and Ranging), and astronomical spectrograph calibration. OFCs have ...

    Heterogeneous Integration of Device Grade Epitaxial Germanium on Silicon Platform using Laser-Induced Crystallization for Optoelectronic Applications 

    Kumari, Khushboo
    Integration of germanium on silicon platform has applications in III-V photovoltaics, integrated silicon photonics, high-speed transistors, etc. In this work, we have used laser-induced crystallization (LIC) to obtain ...

    Versatile sensing platform using silicon photonic microring resonators 

    Prashanth, R
    Measurement of refractive indices of liquids and thin films can play an important role for chemical analysis in the fields of healthcare and biomedical research. There is a requirement of miniaturized refractive index ...

    Cryomilled Group IV elements (Silicon & Germanium) for optoelectronic applications 

    Hemaprabha, E
    Group IV elements such as silicon and germanium are elemental semiconductors and lead to the evolution of modern electronic applications. Synthesis of contamination-free nanoparticles of these materials in bulk quantity ...
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    AuthorArun, S (1)Baby, Rijo (1)Brahma, Madhuchhanda (1)Dawnee, S (1)Garud, Meera (1)Gupta, Harshvardhan (1)Hemaprabha, E (1)Kumari, Khushboo (1)Lakshminarayanan, Oppili Prasad (1)Mehta, Mahek Vijaykumar (1)... View MoreSubjectTECHNOLOGY (19)HEMT (3)CMOS (2)FET (2)Ga2O3 (2)Germanium (2)ISFET (2)Silicon (2)2-D materials (1)3D packaging (1)... View MoreHas File(s)Yes (19)

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