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Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy
(2014-11-18)
The present work has been focused on the growth of Group III-nitride epitaxial layers and nanostructures on Si (111) substrates by plasma-assisted molecular beam epitaxy. Silicon is regarded as a promising substrate for ...
Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
(2016-04-18)
Group III-nitride semiconductors have received much research attention and witnessed a significant development due to their ample applications in solid-state lighting and high-power/high-frequency electronics. Numerous ...