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Group III Nitride/p-Silicon Heterojunctions By Plasma Assisted Molecular Beam Epitaxy
The present work focuses on the growth and characterizations of GaN and InN layers and nanostructures on p-Si(100) and p-Si(111) substrates by plasma-assisted molecular beam epitaxy and the studies of GaN/p-Si and InN/p-Si ...
From Synthesis To Applications Of Pristine And Nitrogen-Doped Carbon Nanotubes
Carbon nanotubes (CNTs) are well known as excellent electrical conductors. However, their transport properties are limited by electrical breakdown in ambient. Moreover, the electronic properties can further be modulated ...
Study Of Relaxor Ferroelectric PMN-PT Thin Films For Energy Harvesting Applications
The present research work mainly focuses on the fabrication of 0.85PMN-0.15PT thin film relaxor ferroelectrics for energy harvesting applications. Chapter 1 gives a brief review about why energy harvesting is required ...
Semipolar And Nonpolar Group III-Nitride Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
Group III-nitride semiconductors are well suited for the fabrication of devices including visible-ultraviolet light emitting diodes, high-temperature and high-frequency devices. The wurtzite III-nitride based heterostructures ...