Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency electronic applications. All of these ...

Carbon nanotubes (CNTs) are well known as excellent electrical conductors. However, their transport properties are limited by electrical breakdown in ambient. Moreover, the electronic properties can further be modulated ...

This thesis aims at investigating size dependence of properties of nanostructures from the point of view of a general scaling theory that smoothly connects properties of the bulk to that of nanostructures. Two different ...

The popularity of III-nitride materials has taken up the semiconductor industry to newer applications because of their remarkable properties. In addition to having a direct and wide band gap of 3.4 eV, a very fascinating ...

Bismuth layer-structured ferroelectrics have received significant attention recently due to their fairly high TC and good fatigue endurance which make them important candidates for non-volatile ferroelectric random access ...