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Group III Nitride/p-Silicon Heterojunctions By Plasma Assisted Molecular Beam Epitaxy
The present work focuses on the growth and characterizations of GaN and InN layers and nanostructures on p-Si(100) and p-Si(111) substrates by plasma-assisted molecular beam epitaxy and the studies of GaN/p-Si and InN/p-Si ...
Semipolar And Nonpolar Group III-Nitride Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
Group III-nitride semiconductors are well suited for the fabrication of devices including visible-ultraviolet light emitting diodes, high-temperature and high-frequency devices. The wurtzite III-nitride based heterostructures ...
Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
Group III-nitride semiconductors have received much research attention and witnessed a significant development due to their ample applications in solid-state lighting and high-power/high-frequency electronics. Numerous ...
Group III-Nitride Epi And Nanostructures On Si(111) By Molecular Beam Epitaxy
The present work has been focused on the growth of Group III-nitride epitaxial layers and nanostructures on Si (111) substrates by plasma-assisted molecular beam epitaxy. Silicon is regarded as a promising substrate for ...